2SA966 transistor (pnp) feature power dissipation p cm : 0.9 w(tamb=25 ) collector current i cm : -1.5 a collector-base voltage v (br)cbo : -30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= -1ma , i e =0 -30 v collector-emitter breakdown voltage v(br) ceo i c = -10 ma , i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -1ma, i c =0 -5 v collector cut-off current i cbo v cb = -30 v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v , i c =0 -0.1 a dc current gain h fe(1) v ce =-2 v, i c = -500ma 100 320 collector-emitter saturation voltage v ce(sat) i c = -1.5 a, i b = -0.03a -2 v base-emitter voltage v be i c = -500 ma, v ce = -2v -1 v transition frequency f t v ce = -2 v, i c = -500ma 100 mhz classification of h fe (1) rank o y range 100-200 160-320 to-92mod 1. emitter 2. collector 3. base 123 2SA966 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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